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  2310a phase control thyristors hockey puk version ST1280C..k series 1 bulletin i25195 rev. b 02/00 www.irf.com features center amplifying gate metal case with ceramic insulator international standard case a-24 (k-puk) high profile hockey-puk typical applications dc motor controls controlled dc power supplies ac controllers i t(av) 2310 a @ t hs 55 c i t(rms) 4150 a @ t hs 25 c i tsm @ 50hz 42500 a @ 60hz 44500 a i 2 t@ 50hz 9027 ka 2 s @ 60hz 8240 ka 2 s v drm /v rrm 400 to 600 v t q typical 200 s t j - 40 to 125 c parameters ST1280C..k units major ratings and characteristics case style a-24 (k-puk)
ST1280C..k series 2 www.irf.com bulletin i25195 rev. b 02/00 voltage v drm /v rrm , max. repetitive v rsm , maximum non- i drm /i rrm max. type number code peak and off-state voltage repetitive peak voltage @ t j = t j max vvma 04 400 500 06 600 700 electrical specifications voltage ratings di/dt max. non-repetitive rate of rise gate drive 20v, 20 ? , t r 1? of turned-on current t j = t j max, anode voltage 80% v drm gate current 1a, di g /dt = 1a/? v d = 0.67% v drm , t j = 25 c i tm = 550a, t j = t j max, di/dt = 40a/?, v r = 50v dv/dt = 20v/?, gate 0v 100 ?, t p = 500? parameter ST1280C..k units conditions switching 1000 a/? t d typical delay time 1.9 t q typical turn-off time 200 ? ST1280C..k 100 i t(av) max. average on-state current 2310 (885) a 180 conduction, half sine wave @ heatsink temperature 55 (85) c double side (single side) cooled i t(rms) max. rms on-state current 4150 @ 25 c heatsink temperature double side cooled i tsm max. peak, one-cycle 42500 t = 10ms no voltage non-repetitive surge current 44500 a t = 8.3ms reapplied 35700 t = 10ms 100% v rrm 37400 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 9027 t = 10ms no voltage initial t j = t j max. 8241 t = 8.3ms reapplied 6383 t = 10ms 100% v rrm 5828 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 90270 ka 2 s t = 0.1 to 10ms, no voltage reapplied v t(to) 1 low level value of threshold voltage v t(to) 2 high level value of threshold voltage r t1 low level value of on-state slope resistance r t2 high level value of on-state slope resistance v tm max. on-state voltage 1.44 v i pk = 8000a, t j = t j max, t p = 10ms sine pulse i h maximum holding current 600 i l typical latching current 1000 0.83 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.077 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.068 (i > x i t(av) ),t j = t j max. parameter ST1280C..k units conditions 0.90 (i > x i t(av) ),t j = t j max. on-state conduction ka 2 s v m ? ma t j = 25 c, anode supply 12v resistive load
ST1280C..k series 3 www.irf.com bulletin i25195 rev. b 02/00 dv/dt maximum critical rate of rise of off-state voltage i rrm max. peak reverse and off-state i drm leakage current blocking 500 v/? t j = t j max. linear to 80% rated v drm parameter ST1280C..k units conditions 100 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 16 t j = t j max, t p 5ms p g(av) maximum average gate power 3 t j = t j max, f = 50hz, d% = 50 i gm max. peak positive gate current 3.0 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage t j = - 40 c ma t j = 25 c t j = 125 c t j = - 40 c vt j = 25 c t j = 125 c i gd dc gate current not to trigger 10 ma parameter ST1280C..k units conditions 20 5.0 triggering typ. max. 200 - 100 200 50 - 1.4 - 1.1 3.0 0.9 - v gd dc gate voltage not to trigger 0.25 v max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated v drm anode-to-cathode applied t j = t j max max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12v anode-to-cathode applied v gt dc gate voltage required to trigger i gt dc gate current required to trigger w vt j = t j max, t p 5ms t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thj-hs max. thermal resistance, 0.042 dc operation single side cooled junction to heatsink 0.021 dc operation double side cooled r thc-hs max. thermal resistance, 0.006 dc operation single side cooled case to heatsink 0.003 dc operation double side cooled f mounting force, ?10% 24500 n (2500) (kg) wt approximate weight 425 g parameter ST1280C..k units conditions k/w c case style a-24 (k-puk) see outline table k/w thermal and mechanical specification
ST1280C..k series 4 www.irf.com bulletin i25195 rev. b 02/00 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - c = ceramic puk 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - k = puk case a-24(k-puk) 7 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 8 - critical dv/dt: none = 500v/?ec (standard selection) l = 1000v/?ec (special selection) ordering information table single side double side single side double side 180 0.003 0.003 0.002 0.002 t j = t j max. 120 0.004 0.004 0.004 0.004 90 0.005 0.005 0.005 0.005 k/w 60 0.007 0.007 0.007 0.007 30 0.012 0.012 0.012 0.012 sinusoidal conduction rectangular conduction conduction angle units conditions device code 5 1 2 3 4 st 128 0 c 06 k 1 7 6 8 ? r thj-hs conduction (the following table shows the increment of thermal resistence r thj-hs when devices operate at different conduction angles than dc)
ST1280C..k series 5 www.irf.com bulletin i25195 rev. b 02/00 outline table case style a-24 (k-puk) all dimensions in millimeters (inches) fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics two places pin receptacle amp. 60598-1 1 (0.04) min. two places 47.5 (1.87) dia. max. 7 4 .5 (2 .9 ) d i a . m a x . 2 holes dia. 3.5 (0.14) x 2.1 (0.1) deep 4.75 (0.2) nom. 27.5 (1.08) m a x. 20 ?5 44 (1.73) crepage destance 28.88 (1.137) min. strike distance 17.99 (0.708) min. 67 (2.6) dia. max. quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) average on-state current (a) maximum allowable heatsink temperature ( c) average on-state current (a) maximum allowable heatsink temperature ( c) 40 50 60 70 80 90 100 110 120 130 0 400 800 1200 1600 30? 60? 90? 120? 180? conduction angle ST1280C..k series (single side cooled) r (dc) = 0.042 k/w thj-hs 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 dc 30 ? 60 ? 90 ? 120 ? 180 ? conduction period ST1280C..k series (single side cooled) r (dc) = 0.042 k/w thj-hs
ST1280C..kseries 6 www.irf.com bulletin i25195 rev. b 02/00 fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5- on-state power loss characteristics fig. 6- on-state power loss characteristics fig. 8 - maximum non-repetitive surge current single and double side cooled average on-state current (a) maximum allowable heatsink temperature ( c) average on-state current (a) average on-state current (a) maximum average on-state power loss (w) average on-state current (a) maximum average on-state power loss (w) number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) pulse train duration (s) peak half sine wave on-state current (a) maximum allowable heatsink temperature ( c) 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 dc 30 ? 60 ? 90 ? 120 ? 180 ? conduction period ST1280C..k series (double side cooled) r (dc) = 0.021 k/w thj-hs 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 3000 30 ? 60 ? 90 ? 120 ? 180 ? conduction angle ST1280C..k series (double side cooled) r (dc) = 0.021 k/w thj-hs 15000 20000 25000 30000 35000 40000 1 10 100 initial t = 125 ? c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j ST1280C..k series at any rated load condition and with rated v applied following surge. rrm 0 400 800 1200 1600 2000 2400 2800 3200 3600 0 500 1000 1500 2000 2500 3000 180 ? 120 ? 90 ? 60 ? 30 ? rms limit conduction angle ST1280C..k series t = 125 ? c j 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 1000 2000 3000 4000 5000 dc 180 ? 120 ? 90 ? 60 ? 30 ? rms limit conduction period ST1280C..k series t = 125 ? c j 15000 20000 25000 30000 35000 40000 45000 0.01 0.1 1 maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. ST1280C..k series initial t = 125 ? c no voltage reapplied rated v reapplied rrm j
ST1280C..k series 7 www.irf.com bulletin i25195 rev. b 01/00 fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics fig. 11 - gate characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) square wave pulse duration (s) transient thermal impedance z (k/w) thj-hs instantaneous gate current (a) instantaneous gate voltage (v) 100 1000 10000 100000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 t = 25 ? c j t = 125 ? c j ST1280C..k series 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 steady state value r = 0.042 k/w (single side cooled) r = 0.021 k/w (double side cooled) (dc operation) thj-hs thj-hs ST1280C..k series 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vg d ig d ( b ) ( a ) tj=25 c tj=125 c tj=-40 c ( 1 ) ( 2 ) ( 3 ) ( 1 ) pgm = 16w, tp = 4ms ( 2 ) pgm = 30w, tp = 2ms ( 3 ) pgm = 60w, tp = 1ms rectan g ular g ate pulse a ) recommended load line for b ) recommended load line for <=30% rated di/dt : 10v, 10ohms fre q uenc y limited b y pg ( av ) rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s device: ST1280C..k series


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